Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal