Flashlamp Annealing for Improved Ferroelectric Junctions
The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. Thermal annealing in the millisecond duration were used in the efforts of reducing dif
