Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
In this work, we for the first time show that the geometrical magnetoresistance (gMR) effect is a powerful tool for extracting the carrier mobility in diffusive InGaAs near-surface quantum well MOSFETs. The technique shows excellent agreement to Hall effect measurements, confirming its validity. In addition, the gMR approach is less time-consuming, is suitable for measurements directly on the FETs
