Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))
Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By compari