Vertical III-V nanowire tunnel field-effect transistors : a circuit perspective
The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. Tunnel Field-Effect Transistors (TFET), which operate on field modula
