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Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width
