A 90nm CMOS UWB LNA
A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide