Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally- OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of ar
