Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give eviden