Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 ba