Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability
The thermal stability of monoclinic Gd2O3 grown on Si(001) as well as changes of the interfacial layer formed during the growth are investigated during rapid thermal annealing in nitrogen atmosphere between 600 °C and 1000 °C using x-ray diffraction and transmission electron microscopy (TEM). The monoclinic Gd2O3 layer was grown at 400 °C and oxygen partial pressure of 5 × 10−7 mbar. The Gd2O3 lay