Cryogenic ferroelectricity of HZO with an aluminum oxide interlayer
In this work, we investigate the cryogenic performance of hafnia-based ferroelectric capacitors with and without an aluminum oxide (ALO) interlayer, comparing conventional metal-ferroelectric-metal (MFM) structures to metal-ferroelectric-insulator-metal (MFIM) counterparts. Devices employing Hf0.5Zr0.5O2 as the ferroelectric layer were characterized from 300 K down to 10 K, targeting temperature r
