Simulation of electron diffraction patterns from III–V alloys with CuPt ordering : Effect of clusters and antiphase boundaries
A method for the simulation of electron diffraction patterns from partially ordered semiconductor compounds with CuPt-type ordering is proposed. The simulation procedure is based on the generation of two-dimensional model structures containing different types of imperfections. The defects are randomly dispersed in the structure and they are characterized by statistical parameters (density, average
