The precipitation behavior, especially the early nucleation stages, of the industrial strip-cast Al3003 alloys was investigated by using transmission electron microscopy (TEM). An icosahedral quasicrystalline phase was found as secondary particles in these strip-cast alloys after heat treatment for a few seconds. Three different nucleation paths are proposed based on the TEM observations. They hav

Pleural mesothelioma (PM) is an aggressive malignancy that develops in a unique tumor microenvironment (TME). However, cell models for studying the TME in PM are still limited. Here, we have generated and characterized novel human telomerase reverse transcriptase (hTERT)-transduced mesothelial cell and mesothelioma-associated fibroblast (Meso-CAF) models and investigated their impact on PM cell gr

Most proteins fold into characteristic three-dimensional structures. The rate of folding and unfolding varies widely and can be affected by variations in proteins. We developed a novel machine-learning-based method for the prediction of the folding rate effects of amino acid substitutions in two-state folding proteins. We collected a data set of experimentally defined folding rates for variants an

Cross-sectional transmission electron microscopy, including high resolution microscopy, was employed to characterize the interfaces between hydrogenated amorphous carbon (a-C:H) films and steel substrates. Films were deposited both by ion beam decomposition of large hydrocarbon molecules and by magnetron plasma decomposition of C2H2. The latter method was also used to deposit Mo- and W-containing

Tourmalines with different compositions show different plane group symmetries in experimental high resolution transmission electron microscopy (HRTEM) when projected along the c-axis. Fe-poor elbaite shows p31m symmetry, while Fe-bearing elbaite shows p3m1 symmetry. Rubellite shows p6 symmetry, while Fe-Mg-Al-bearing tourmaline shows a `pseudo' p6 type of symmetry. Symmetries p3m1 and p6 are not c

A higher critical current and enhanced pinning was obtained in c-axis-oriented YBa2Cu3O7−x (YBCO)films having a higher density of semicoherent yttria (Y2O3) inclusions. The films were grown by sputtering and the inclusion density depends on the fraction of N2O in the sputtering gas. The inclusions were studied by transmission electron microscopy, both in planar sections and in cross-sections. They

Cross-sectional transmission electron microscopy (XTEM), including high-resolution microscopy (HREM), was employed to characterize the interface between different amorphous hydrogenated carbon (a-C:H) films and steel substrates. Additional analyses using Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were also performed. Films were deposited both by high-energy (50 keV) nitrogen ion

Using a data set of 1.1 million speeches drawn from UK House of Commons debates during 1997–2017 and a combination of automated and manual content analysis, this study addresses three interrelated questions. First, to what extent are minoritised women constitutively represented in parliamentary debates? Second, which MPs do so? Third, how do MPs’ race and gender affect how they represent minoritis

There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanc

Thermal stability of WxSi1−x/Si multilayers (MLs) with x varying from 1 to 0.11 is studied by TEM and LAXS. The structure of the prepared samples is amorphous. Doping of W sublayers with silicon affects the interdiffusion process as well as the crystallization in these sublayers. We investigated these two processes (which have a detrimental influence on e.g. X-ray mirror stability) by annealing ou

InP islands in a matrix of GaInP are investigated by transmission electron microscopy (TEM). The islands are uniform in size and shape, and are formed though self‐organized Stranski‐Krastanow growth. The introduction of a 4 ML intermediate GaP layer eliminates the bimodal distribution found in films where the InP was grown directly on the GaInP layer. The achieved island density is around 2 × 109

This short article introduces a novel framework for conceiving of the substantive representation of marginalized groups – in this case, racially minoritized women in the UK House of Commons. I outline a rubric of eight facets of substantive representation. These evaluate the degree to which claims that constitute a group are also substantively representative of that group. In doing so, I contribut

The high energy electron beam was used for the local amorphisation of metallic multilayer. The observed effect is proposed for the application in nanometer-scale technology.

Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin similar to 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, in

We have used transmission electron microscopy to determine the morphology of InP Stranski-Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 degrees C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes definiWe have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the

Satellite dark field (SDF) imaging is used to show that there is a definite change in symmetry on moving across the two-phase region separating the so-called "defect fluorite" and C-type sesquioxide solid solution regions in (1 - x)CeO2 · xRO1.5 and (1 - x )ZrO2 · xRO1.5 systems. SDF images of the "defect fluorite" side of the two-phase region are characterized by a microdomain texture on the ∼100

Shape, size and density of dots of InP on GaInP and GaAs surfaces, formed in-situ by the strain-induced phase transition from a two-dimensional (Frank-Van der Merwe) into a three-dimensional layer+islands (Stranski-Krastanow) morphology, are investigated. The observations support models which include the kinetics of island formation as important ingredients to explain the rather high size homogene

C2H4 oxidation on plane Pt/SiO2 model catalysts with various Pt loadings was studied at T = 373-473 K and in the pressure ranges 10-6-102 Torr C2H4 and 0.3-1500 Torr O2 (1 Torr = 133.3 Pa). Mass spectrometry combined with spatially resolved gas sampling enabled kinetic data to be collected far into the viscous pressure regime. Reaction orders and activation energies were similar to those of a macr

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110],