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Perturbed cellular response to brain injury during aging

Old age is associated with an enhanced susceptibility to stroke and poor recovery from brain injury, but the cellular processes underlying these phenomena are only partly understood. Therefore, studying the basic mechanisms underlying structural and functional recovery after brain injury in aged subjects is of considerable clinical interest. Behavioral and cytological analyses of rodents that have

High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stac

Can antimonide-based nanowires form wurtzite crystal structure?

The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende (ZB) crystal structure rather than wurtzite (WZ), which is common in other III-V nanowire m

Polytype Attainability in III-V Semiconductor Nanowires

We propose a model that explains the phenomenon of polytypism in metal particle-seeded III-V semiconductor nanowires. The model is based on classical nucleation theory, utilizing the axial next-nearest-neighbor Ising (ANNNI) model to account for interlayer interaction up to the third nearest-neighboring layer. We investigate the limits of polytypism by varying the ANNNI interaction parameters. The

Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.

The nanowire geometry offers significant advantages for exploiting the potential of III-Sb materials. Strain due to lattice mismatch is efficiently accommodated, and carrier confinement effects can be utilized in tunneling and quantum devices for which the III-Sb materials are of particular interest. It has however proven difficult to grow thin (below a few tens of nanometers), epitaxial III-Sb na

Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as co

Intratumoral IL-7 delivery by mesenchymal stromal cells potentiates IFNgamma-transduced tumor cell immunotherapy of experimental glioma.

The present study reports regression of pre-established experimental rat gliomas as a result of combining peripheral immunization using interferon gamma (IFNgamma) transduced autologous tumor cells with local intratumoral delivery of interleukin 7 (IL-7) by mesenchymal stromal cells. IL-7 alone significantly decreased the tumor area and this effect was enhanced with IFNgamma immunization. A higher

Effect of inspired air conditions on exercise-induced bronchoconstriction and urinary CC16 levels in athletes

Bolger C, Tufvesson E, Anderson SD, Devereux G, Ayres JG, Bjermer L, Sue-Chu M, Kippelen P. Effect of inspired air conditions on exercise-induced bronchoconstriction and urinary CC16 levels in athletes. J Appl Physiol 111: 1059-1065, 2011. First published July 28, 2011; doi:10.1152/japplphysiol.00113.2011.-Injury to the airway epithelium has been proposed as a key susceptibility factor for exercis

InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confir

Carotid Velocities Determine Cerebral Blood Flow Deficits in Elderly Men with Carotid Stenosis

To examine if mild carotid stenosis correlates with silent vascular brain changes, we studied a prospective population-based cohort "Men born in 1914." Data from followups at ages 68 and 81, have been used. Carotid ultrasound was performed at age 81, and cerebral blood flow (CBF) was measured with SPECT at age 82. Out of 123 stroke-free patients, carotid stenosis <50% was observed in 94% in the ri

Blood pressure and pulse wave velocity as metrics for evaluating pathologic ageing of the cardiovascular system.

The influence of chronological ageing on the components of the cardiovascular system is of fundamental importance for understanding how hemodynamics change and the cardiovascular risk increases with age, the most important risk marker. An increase in peripheral vascular resistance associated with increased stiffness of central elastic arteries represents hallmarks of this ageing effect on the vasc

rs2072135, a low-penetrance variant for chronic lymphocytic leukaemia?

Recent multi-stage genome-wide association studies (GWAS) have identified single nucleotide polymorphisms (SNPs) that are robustly associated with chronic lymphocytic leukaemia (CLL) risk. Given that most of these SNPs map to non-coding regions of the genome, it suggests that the functional basis of many GWAS signals will be through differential gene expression. By referencing publically accessibl

Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate

The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorptio

Strategies To Control Morphology in Hybrid Group III-V/Group IV Heterostructure Nanowires.

By combining in situ and ex situ transmission electron microscopy measurements, we examine the factors that control the morphology of "hybrid" nanowires that include group III-V and group IV materials. We focus on one materials pair, GaP/Si, for which we use a wide range of growth parameters. We show through video imaging that nanowire morphology depends on growth conditions, but that a general pa

Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.

Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is ex

Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.

Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate nanowire surfaces with native oxide and molecular adsorbates res